? 2006 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 37 a 36 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1 m 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c35a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c60a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 p d t c = 25 c 120 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, i isol 1 ma, t = 1 minute 2500 v~ f c mounting force 11..65 / 2.5..15 n/lb weight 3g g = gate d = drain s = source ds99243e(03/06) polarht tm hiperfet power mosfet isoplus220 tm (electrically isolated back surface) v dss = 200 v i d25 =35 a r ds(on) =36m t rr 200 ns n-channel enhancement mode fast recovery diode, avalanche rated ixfc 74n20p g d s isoplus 220 tm e153432 isolated back surface* features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<35pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly: no screws, or isolation foils required z space savings z high power density z low collector capacitance to ground (low emi)
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 74n20p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 37 a, pulse test 30 44 s c iss 3300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 770 pf c rss 190 pf t d(on) 23 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 74 a 21 ns t d(off) r g = 4 (external) 60 ns t f 21 ns q g(on) 107 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 37 a 24 nc q gd 52 nc r thjc 1.25 k/w r thcs 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 74 a i sm repetitive 180 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 0.4 c i rm 6a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3.
? 2006 ixys all rights reserved ixfc 74n20p fig. 6. drain current vs. case tem perature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 2. exte nde d output characte ris tics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 01234567 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alize d to 0.5 i d25 value vs. junction tem perature 0.6 1 1.4 1.8 2.2 2.6 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 74a i d = 37a v gs = 10v fig. 5. r ds(on) norm alize d to 0.5 i d25 value vs . i d 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s ( o n ) - normalized t j = 175oc t j = 25oc v gs = 10v v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 74n20p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v g s - volts v ds = 100v i d = 37a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.544.555.566.57 v g s - volts i d - amperes t j = 150oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 20406080100120 i d - amperes g f s - siemens t j = -40oc 25oc 150oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 150oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r ds(on) limit 10ms 25 s fig . 12. fo r w ar d -bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r d s(on) limit 10ms 25 s fig. 12. for w ar d-bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r ds(on) limit 10ms 25 s
? 2006 ixys all rights reserved ixfc 74n20p fig. 13. maxim um transient therm al resistance 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 pulse width - millisec onds r ( t h ) j c - oc / w ixys ref: t_74n20p (6s) 6-15-05-d.xls
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